M182-11BB

M182-11BB

  • Dimension: 182*182±0.5mm
  • Thickness: 165±16.5μm
  • TkVoltage: -0.36%/K
  • TkCurrent: +0.07%/K
  • TkPower: -0.38%/K
  • Product Details

    • Introduction
    Extremely low light-induced degradation
    Strong low-light response
    Low temperature poly-Si deposition process
    Advanced Laser-enhanced contact optimization
    Extremely low light-induced degradation
    High module sealed power
    Advanced passivation & doping technology
    Strong weather resistance
    Extremely low light-induced degradation

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